hbdm60v600 w complex transistor array for bipolar transistor half h-bridge motor/actuator driver features ? epitaxial planar die construction ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) sub-component p/n reference device type mmbt2907a_die q1 pnp transistor mmbta06_die q2 npn transistor mechanical data ? case: sot-363 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see schem atic & pin configuration ? terminals: finish - matte ti n annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 6 ? ordering information: see page 6 ? weight: 0.016 grams (approximate) eq1 bq2 eq2 cq1 cq2 q2 mmbta06 q1 mmbt2907a bq1 top view HBDM60V600W document number: ds30701 rev. 5 - 2 1 of 7 www.diodes.com july 2008 ? diodes incorporated maximum ratings: total device @t a = 25c unless otherwise specified device schematic characteristic symbol value unit operating and storage junction temperature range v ebo -55 to +150 c thermal characteristics: total device characteristic symbol value unit power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient air (note 3) r ja 625 c/w maximum ratings: sub-component devices @t a = 25c unless otherwise specified characteristic symbol q1-pnp transistor (mmbt2907a) q2-npn transistor (mmbta06) unit collector-base voltage v cbo -60 80 v collector-emitter voltage v ceo -60 65 v emitter-base voltage v ebo -5.5 6 v collector current - continuous (note 3) i c -600 500 ma notes: 1. no purposefully added lead. 2. diodes inc. 's "green" policy can be found on our website at http:// www.di odes.com/products/lead_fr ee/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on diodes i nc. suggested pad la yout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf.
HBDM60V600W document number: ds30701 rev. 5 - 2 2 of 7 www.diodes.com july 2008 ? diodes incorporated hbdm60v600 w electrical characteristics: pn p (mmbt2907a) transistor (q1) @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -60 ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.5 ? v i e = -10 a, i c = 0 collector cutoff current i cbo ? -10 na v cb = -50v, i e = 0 collector cutoff current i cex ? -50 na v ce = -30v, v eb(off) = -0.5v base cutoff current i bl ? -50 na v ce = -30v, v eb(off) = -0.5v on characteristics (note 4) dc current gain h fe 100 100 100 100 50 ? ? ? 300 ? ? ? ? ? ? i c = -100 a, v ce = -10v i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -150ma, v ce = -10v i c = -500ma, v ce = -10v collector-emitter saturation voltage v ce(sat) ? -0.3 -0.5 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) ? -0.95 -1.3 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma small signal characteristics current gain-bandwidth product f t 100 ? mhz v ce = -2.0v, i c = -10ma, f = 100mhz switching characteristics turn-on time t on ? 45 ns delay time t d ? 10 ns rise time t r ? 40 ns v ce = -30v, i c = -150ma, i b1 = -15ma turn-off time t off ? 100 ns storage time t s ? 80 ns fall time t r ? 30 ns v cc = -6.0v, i c = -150ma, i b1 = i b2 = -15ma electrical characteristics: npn (mmbta06) transistor (q2) @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 80 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 65 ? ? v i c = 1ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6 ? ? v i e = 100 a, i c = 0 collector-base cutoff current i cbo ? ? 100 na v cb = 80v, i e = 0 collector cutoff current i ces ? ? 100 na v ce = 90v, v be = 0 emitter-base cutoff current i ebo ? ? 100 na v eb = 5v, i c = 0 on characteristics (note 4) 250 ? ? ? v ce = 1v, i c = 10ma dc current gain h fe 100 ? ? ? v ce = 1v, i c = 100ma collector-emitter saturation voltage v ce(sat) ? 0.2 0.4 v i c = 100ma, i b = 10ma base-emitter turn-on voltage v be(on) 0.7 0.75 0.8 v v ce = 1v, i c = 100ma base-emitter saturation voltage v be(sat) ? ? 0.95 v i c = 100ma, i b = 5ma small signal characteristics current gain-bandwidth product f t 100 ? ? mhz v ce = 20v, i c = 10ma, f = 100mhz notes: 4. short duration pulse test used to minimize self-heating effect.
hbdm60v600 w typical characteristics @t a = 25c unless otherwise specified 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power derating curve a 150 200 0 pnp (mmbt2907a) transistor (q1) plots: 1.0 5.0 20 10 30 0.1 10 1.0 30 c , c a p a c i t an c e (p f ) reverse voltage (v) fig. 2 typical capacitance cobo cibo -i , base current (ma) fig. 3 typical collector saturation region b -v , c o lle c t o r -emi t t e r v o l t a g e (v) ce 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 i = 1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c HBDM60V600W document number: ds30701 rev. 5 - 2 3 of 7 www.diodes.com july 2008 ? diodes incorporated 0 0.1 0.2 0.3 0.6 0.5 0.4 11 0 100 1,000 -i , collector current (ma) fig. 4 collector emitter saturation voltage vs. collector current c -v , c o lle c t o r t o emi t t e r saturation voltage (v) ce(sat) i i c b = 10 t = 150c a t = 25c a t = -50c a 1 10 1,000 100 11 0 1,000 100 h, d c c u r r en t g ain fe -i , collector current (ma) fig. 5 typical dc current gain vs. collector current c v = 5v ce t = 150c a t = 25c a t = -50c a
hbdm60v600 w 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 11 0 -v , base emi 1 0 0 t t e r v o l t a g e (v) be(on) -i , collector current (ma) fig. 6 typical base emitter voltage vs. collector current c v = 5v ce t = 150c a t = 25c a t = -50c a 1 10 1,000 100 1 10 100 f, g ain bandwid t h p r o d u c t (m h z) t -i , collector current (ma) fig. 7 typical gain bandwidth product vs. collector current c npn (mmbta06) transistor (q2) plots 0.001 0.01 i base current (ma) fig. 9 typical collector saturation region b, 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 v, c o lle c t o r emi t t e r v o l t a g e (v) ce i = 1ma c i = 10ma c i = 30ma c i = 100ma c i , collector-base current (na) cbo ture t , ambient temperature (oc) fig. 8 typical collector-cutoff current vs. ambient tempera a 10 0.01 0.1 1 25 50 75 100 125 1 10 1,000 10,000 100 1 10 1,000 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 11 typical dc current gain vs. collector curren c HBDM60V600W document number: ds30701 rev. 5 - 2 4 of 7 www.diodes.com july 2008 ? diodes incorporated 11 0 100 1,000 v, c o lle c t o r t o emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 10 typical collector emitter saturation voltage vs. collector cur re nt c t = 25c a t = -50c a t = 150c a 0.050 0 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 i i c b = 10 t
1 0 0 hbdm60v600 w 1 10 1,000 100 1 10 f, g ain bandwid t h p r o d u c t (m h z) t i , collector current (ma) fig. 13 typical gain bandwidth product vs. collector current c 0.1 0.2 0.1 11 0 v , base emi t t e r v o l t a g e (v) be(on) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i , collector current (ma) fig. 12 typical base emitter voltage vs. collector current c current schematic along with application example: q4 r1 36 bq1 eq1 r8 1k bq2 cq2 cq2 r3 q2 mmbta06 c1 bq1 q1 mmbt2907a HBDM60V600W HBDM60V600W document number: ds30701 rev. 5 - 2 5 of 7 www.diodes.com july 2008 ? diodes incorporated bq2 0 q3 half h-bridge q2 mmbta06 0 reverse d4 forward c2 r5 1k d1 cq1 cq1 half h-bridge motor d3 d2 q1 mmbt2907a r4 eq2 9v-12v HBDM60V600W note: d1, d2, d3, d4: switching diodes (mmbd4448) q3, q4: npn transistors (mmbta06)
HBDM60V600W document number: ds30701 rev. 5 - 2 6 of 7 www.diodes.com july 2008 ? diodes incorporated hbdm60v600 w application example schema tic: (with package pinouts) r4 470 reverse r3 470 control input 5v/0v u4 HBDM60V600W bq1 bq2 cq2 eq2 eq1 cq1 1 2 34 5 6 u5 mm mbd4448htw a1 a2 a3 c3 c2 c1 1 2 34 5 6 inv5v0w u3 eq1 bq2 cq2 eq2 bq1 cq1 1 2 34 5 6 r1 36 r2 33k u1 mmbd4448dw a1 nc c2 a2 HBDM60V600W document number: ds30701 rev. 5 - 2 6 of 7 www.diodes.com july 2008 ? diodes incorporated application example schema tic: (with package pinouts) hbdm60v600 w r4 470 reverse r3 470 control input 5v/0v u4 HBDM60V600W bq1 bq2 cq2 eq2 eq1 cq1 1 2 34 5 6 u5 mbd4448htw a1 a2 a3 c3 c2 c1 1 2 34 5 6 inv5v0w u3 eq1 bq2 cq2 eq2 bq1 cq1 1 2 34 5 6 r1 36 r2 33k u1 mmbd4448dw a1 nc c2 a2 nc c1 1 2 34 5 6 c1 c2 u2 HBDM60V600W bq1 bq2 cq2 eq2 eq1 cq1 1 2 34 5 6 motor r5 1k r6 1k 9v-12v forward q1 ordering information (note 5) part number case packaging HBDM60V600W-7 sot-363 3000/tape & reel n otes: 5. for packaging det ails, go to our website at http://www.di odes.com/datasheets/ap02007.pdf . marking information date code key year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 code t u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d hb01 = product type marking code ym = date code marking y = year (ex: t = 2006) m = month (ex: 9 = september) hb01 ym
HBDM60V600W document number: ds30701 rev es.com july 2008 ? diodes incorporated package outline dimensions hbdm60v600 w suggested pad layout . 5 - 2 7 of 7 www.diod important notice diodes incorporated and its sub sidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes w ithout further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product d escribed herein; ghts of others. the user of products in such applications shall neither does it convey any license under its patent rights, nor the ri assume all risks of such rporated a are represented on our website, use and will agree to hold diodes inco nd all the companies whose products harmless against all damages. life sup port diodes incorporated pro al compo ystems without the e xpressed written ducts are not authoriz ed for use as critic nents in life support devices or s approval of the president of diodes incorporated. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65 a m j l d b c h k f e e x z y c g
|
